Abstract— A sensor based on Pd/SiO2/Si MOS capacitor was fabricated on p type <100> (1-6 ΩCm) Si with thermal oxide layer of thickness about 200 A˚. The sensor showed sensitivity to Xyelene (C8H10 ) vapour and was characterized at Xyelene concentrations ranging from (500ppm-16,000ppm) at different operating temperatures (room temperature,70˚C and 120˚C), in air. It was found that sensitivity of the sensor was maximum at an operating temperature of 70˚C.
Keywords— MOS (metal-oxide- semiconductor) structure, gas sensor, Palladium (Pd), sensitivity, C-V and G-V characteristics.
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