Abstract— The electrical and photovoltaic properties of CdTe/p-Si heterojunction solar cells prepared by evaporation cooting on a single-crystal p-type silicon substrates are examined, under (100) mw/cm2, 25℃. The best fabricated cell shows an open-circuit voltage before irradiation g is(0.59V) and after irradiation g is (0.565 V ). The short-circuit current density before irradiation is (35 mA/cm2) and after irradiation is(30 mA/cm2). The fill factor before irradiation g is (54.5 %) and after irradiation g is (53 %). The conversion efficiency (active area) before irradiation g is(11.2%) and after irradiation g is(5.1%) .was observed during two-hour illumination test and after storing the cell in air for three months. The illumination is from the CdTe side (front wall ) .The cells are analyzed using I-V and P-V measurements, with focus on the influence of the time solar cell radiation, light intensity illumination and effective dose of γ-radiation, which play a crucial role to improve the solar cell efficiency. γ-irradiation campaign with different doses has been carried out on a series of solar cells. Deterioration of silicon solar cells parameters by gamma irradiation; this is strongly supported by results of minority carrier lifetime, which show a clearly decreasing minority carrier lifetime as radiation dose increases.
Keywords— n-CdTe/ P-Si Cells Performance, γ-radiation Effects, Electrical and Photovoltaic Characteristics solar cell, gamma radiation, spectral photo current.
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